| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which quick access can be performed at the time of read-out and write-in preventing that data is disturbed in a cell of a non-selection sector at the time of programming in a selection cell or the time of erasure. SOLUTION: A non-volatile semiconductor memory has memory cells 100 having first and second MONOS memory cells controlled by a word gate and a control gate, and a memory cell array region in which a plurality of memory cells are arranged in the direction of A and B. The memory cell array region has a plurality of sector regions 0, 1, etc., divided in the second direction B. Each of a plurality of control gate driver can set potentials of first and second control gates in corresponding on sector region independently for the other sector regions. Also, a plurality of selection switching elements Q selecting respectively connection/non-connection are provided at a common connection point of each of a plurality of main bit lines MBL and each of a plurality of sub-bit lines SBL.</p> |
