SEMICONDUCTOR LASER DIODE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser diode emitting laser light in a single peak intensity pattern at a narrow emission angle. SOLUTION: The semiconductor laser diode comprises a substrate 1, and a multilayer film including an active layer 3 formed on the substrate 1. The multilayer film has a stripe structure 6 of tapered width extending in the longitudinal direction of a resonator, and first and second side faces 30a and 30b holding the stripe structure 6 between. At least one of the first and second side faces 30a and 30b is inclining to the major surface 1a of the substrate 1.