| 摘要 |
PURPOSE: A memory device provided with a page buffer having a dual register and a method for utilizing the same are provided to increase a data storage speed and to smoothly implement a copyback operation by providing the dual register having a main register and an auxiliary register, thereby improving the performance of the memory device. CONSTITUTION: A memory device provided with a page buffer having a dual register includes an array(110) of memory cells for storing data, Y-gating circuit(130) for selecting the data stored at the array of memory cells, a page buffer(120), connected between the array(110) of memory cells and the Y-gating circuit(130) through a sensing node, provided with a first register corresponding to each of the memory cells and a second register related thereto, wherein the sensing node is connected to the first and the second registers in common, the first register is used for writing the data on the memory cell and the second register is used for storing the external data through the Y-gating circuit(130) at the same time.
|
