| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a dynamic memory cell as well as a semiconductor memory comprising the memory cell, related to a semiconductor substrate comprising a trench capacitor 1 and a switching transistor 2. SOLUTION: Dielectric insulating layers 107 and 201 are formed between the switching transistor 2 and the trench capacitor 1. A contact opening 213 comprising a conductive contact-filling layer 214 is disposed almost above a polysilicon filling layer 102, which is an internal electrode of block type, of the trench capacitor 1, being positioned above the insulating layers 107 and 201. The contact opening 213 is coupled with a second diffusion region 204 of the switching transistor 2. |
