METHOD FOR FABRICATING LASER DIODE

摘要

PURPOSE: A method for fabricating a laser diode is provided to form the laser diode with an inverse mesa structure by using an etch solution of Br-MeOH. CONSTITUTION: The first conductive type clad layer(2), an active layer(3), and the second conductive type clad layer(4) are sequentially stacked on the first conductive type semiconductor substrate(1). An oxide layer pattern is formed on an upper portion of the second conductive type clad layer. The second conductive type clad layer is etched by using the mixed etch solution of HCl and H2O. The exposed active layer and the first conductive type clad layer are etched by using the etch solution of Br-MeOH. An inverse mesa structure is formed by etching the exposed active layer and the first conductive type clad layer.