发明名称 Microlithographic device, microlithographic assist features, system for forming contacts and other structures, and method of determining mask patterns
摘要 A method of formulating and fabricating a mask pattern and resulting mask for forming isolated or closely spaced contact holes in an integrated circuit. The mask has a transparent mask substrate and patterned regions of attenuating phase shift material and opaque, partially transmissive or transparent material arranged to reduce the effect of side lobes and improve depth of focus. The rims, frames and outrigger patterns for the attenuating phase shift material and opaque, partially transmissive or transparent material are determined according to calculations performed on a processor with imaging software for various optical conditions and exposed feature criteria.
申请公布号 US2003027366(A1) 申请公布日期 2003.02.06
申请号 US20010917697 申请日期 2001.07.31
申请人 DULMAN H. DANIEL;STANTON WILLIAM A. 发明人 DULMAN H. DANIEL;STANTON WILLIAM A.
分类号 G03F1/00;G03F1/14;(IPC1-7):H01L21/66;G01R31/26 主分类号 G03F1/00
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