Method of making thin films dielectrics using a process for room temperature wet chemical growth of SiO based oxides on a substrate

摘要

Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process utilizes a mixture of a silicon source, a pyridinium compound, an aqueous redox solution, and a homogeneous aqueous solution.