发明名称 |
Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa |
摘要 |
In one embodiment of the present invention, a highly reflective dielectric stack is formed on the mesa wall of a flip-chip LED. The layers of the dielectric stack are selected to maximize reflection of light incident at angles ranging from -10 to 30 degrees, relative to the substrate. The dielectric stack is comprised of alternating low refractive index and high refractive index layers. In some embodiments, the LED is a III-nitride device with a p-contact containing silver, the dielectric stack layer adjacent to the mesa wall has a low refractive index compared to GaN, and the low refractive index layers are Al2O3.
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申请公布号 |
US2003025212(A1) |
申请公布日期 |
2003.02.06 |
申请号 |
US20010852857 |
申请日期 |
2001.05.09 |
申请人 |
BHAT JEROME CHANDRA;STEIGERWALD DANIEL ALEXANDER |
发明人 |
BHAT JEROME CHANDRA;STEIGERWALD DANIEL ALEXANDER |
分类号 |
H01L21/314;H01L21/316;H01L33/20;H01L33/32;H01L33/40;H01L33/46;(IPC1-7):H01L23/52 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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