| 摘要 |
A method for monitoring bipolar junction transistor emitter window etching process is disclosed. The method at least includes the following steps. First of all, a substrate is provided having a silicon oxide layer thereon and a silicon nitride layer on the silicon oxide layer. Then, a semiconductor layer is deposited on the silicon nitride layer. Next, a conductive region of a first conductivity type is formed in the semiconductor layer. Then, a dielectric layer is formed on the semiconductor layer. Then, the dielectric layer and the semiconductor layer are anisotropically etched to stop on the silicon oxide layer to define an emitter region of the bipolar junction transistor. Finally, the silicon oxide layer is isotropically etched.
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