METHOD TO PROVIDE A REDUCED CONSTANT E-FIELD DURING ERASE OF EEPROMS FOR RELIABILITY IMPROVEMENT

摘要

A method to reduce the peak electric field during erase of a memory device composed of multiple memory cells. The electric field Efield of the memory cell during erase is determined by the equation Efield SIMILAR ag(Vgate - Vth) + Vtuv + (as -1)Vsource and varying gate voltages Vgate are applied to the gate of the cell being erased so that the Vgate - Vth is constant during the erase procedure.