发明名称 TRANSFER METHOD, METHOD OF MANUFACTURING THIN FILM ELEMENT, METHOD OF MANUFACTURING INTEGRATED CIRCUIT, CIRCUIT SUBSTRATE AND METHOD OF MANUFACTURING THE CIRCUIT SUBSTRATE, ELECTRO-OPTIC DEVICE AND METHOD OF MANUFACTURING THE ELECTRO-OPTIC DEVICE, AND IC CARD AND ELECTRONIC EQUIPMENT
摘要 A transfer method, comprising the steps of forming a plurality of transferred bodies on a transferring base material and providing an energy to a partial area corresponding to the transferred bodies to be transferred to transfer the corresponding transferred bodies in the partial area to a transferred base material, whereby, since the plurality of transferred bodies such as elements and circuits disposed at intervals on the transferred base material can be manufactured by integrating on the transferring base material, as compared with a case where the transferred bodies are formed directly on the transferred base material, the use amount of material for manufacturing the transferred bodies can be reduced, an area efficiency can be remarkably increased, and the transferred base material having a large number of elements and circuits dispersedly disposed thereon can be efficiently manufactured at a low cost.
申请公布号 WO03010825(A1) 申请公布日期 2003.02.06
申请号 WO2002JP07500 申请日期 2002.07.24
申请人 SEIKO EPSON CORPORATION 发明人 SHIMODA, TATSUYA;UTSUNOMIYA, SUMIO
分类号 H01L21/336;H01L21/77;H01L21/8242;H01L21/8244;H01L21/8246;H01L21/8247;H01L21/84;H01L27/115;H01L27/118;H01L27/13;H01L27/32;H01L51/56;H05K3/04 主分类号 H01L21/336
代理机构 代理人
主权项
地址