发明名称 |
Method and apparatus for processing semiconductor substrates |
摘要 |
Apparatus and methods for producing semiconductor devices are disclosed. A processing chamber includes an interior component having a stepped region including a plurality of raised sections and recessed sections divided by steps. With this apparatus, it is possible to prevent a film of deposited material formed on the stepped region from peeling, thereby decreasing the number of particles in the chamber and increasing the operation rate.
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申请公布号 |
US2003024642(A1) |
申请公布日期 |
2003.02.06 |
申请号 |
US20020142997 |
申请日期 |
2002.05.13 |
申请人 |
KAWASAKI MICROELECTRONICS, INC. |
发明人 |
SUZUKI KATSUNORI;HORIUCHI HIDETAKA;KIKUCHI YASUSHI;YOKOGAWA JIN;KUBO RYOUICHI;WAKABAYASHI KOJI |
分类号 |
H01L21/30;C23C16/44;H01J37/32;H01L21/00;(IPC1-7):C23F1/00;C23C16/00 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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