发明名称 Method and apparatus for processing semiconductor substrates
摘要 Apparatus and methods for producing semiconductor devices are disclosed. A processing chamber includes an interior component having a stepped region including a plurality of raised sections and recessed sections divided by steps. With this apparatus, it is possible to prevent a film of deposited material formed on the stepped region from peeling, thereby decreasing the number of particles in the chamber and increasing the operation rate.
申请公布号 US2003024642(A1) 申请公布日期 2003.02.06
申请号 US20020142997 申请日期 2002.05.13
申请人 KAWASAKI MICROELECTRONICS, INC. 发明人 SUZUKI KATSUNORI;HORIUCHI HIDETAKA;KIKUCHI YASUSHI;YOKOGAWA JIN;KUBO RYOUICHI;WAKABAYASHI KOJI
分类号 H01L21/30;C23C16/44;H01J37/32;H01L21/00;(IPC1-7):C23F1/00;C23C16/00 主分类号 H01L21/30
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