SOI DEVICE HAVING TRENCH ISOLATION LAYER AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: An SOI(Silicon On Insulator) device having a trench isolation layer and a method for fabricating the same are provided to reduce junction capacitance of the SOI device by forming a structure of a dual trench having two regions of different depth. CONSTITUTION: A semiconductor substrate(130) including a base layer(110), a buried oxide layer(115), and a semiconductor layer(120) is prepared. A trench(T) having the first region and the second region is formed to define an active region of the semiconductor layer(120). The depth of the first region is less than the thickness of the semiconductor layer(120). The depth of the second region is equal to the thickness of the semiconductor layer(120). An isolation layer(170) is formed by stacking an oxide layer liner(155), a nitride layer liner(160), and an insulating layer(165) on an inner wall and a bottom of the trench(T).