Semiconductor laser structure and method of manufacturing same

摘要

A semiconductor laser structure including a substrate (1) and an active region comprising at least one active laser layer (3). The substrate (1) has a front surface (1a) and the active region (3) is included in a ridge formation (12) protruding from the front surface (1a) of the substrate (1). The ridge formation (12) extends in the direction of the laser cavity and includes at least two opposed lateral extensions (13) defining respective bonding pads distributed along the length of the laser cavity.