| 摘要 |
PURPOSE: A BCD(Bipolar-CMOS-DMOS) device and a method for fabricating the same are provided to enhance a degree of integration by dividing particular devices by a trench. CONSTITUTION: A SiGe-HBT device is fabricated by forming the first buried layer, the second buried layer, an emitter electrode, a base electrode, and a collector electrode on a silicon substrate. An n-MOS device is fabricated by forming a gate electrode, a source electrode, and a drain electrode on an n-well region of an epitaxial layer(206) divided by the SiGe-HBT device and a trench. A p-MOS device is fabricated by forming a gate electrode, a source electrode, and a drain electrode on a p-well region(218a,218c) of the epitaxial layer(206) isolated by the n-MOS device and a field oxide layer(223). A p-LDMOS device is fabricated by forming a gate electrode, a source electrode, and a drain electrode on the n-well region(216a,216b) of the second buried layer(205) and forming a p-drift region(216b) on the second buried layer. An n-LDMOS device is fabricated by forming a gate electrode, a source electrode, and a drain electrode on the p-well region(218a,218c) and forming an n-drift region of the second buried layer.
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