发明名称 |
Laser-induced bandgap shifting for photonic device integration |
摘要 |
To shift the bandgap of a quantum well microstructure, the surface of the microstructure is selectively irradiated in a pattern with ultra violet radiation to induce alteration of a near-surface region of said microstructure. Subsequently the microstructure is annealed to induce quantum well intermixing and thereby cause a bandgap shift dependent on said ultra violet radiation.
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申请公布号 |
US6514784(B1) |
申请公布日期 |
2003.02.04 |
申请号 |
US20000654614 |
申请日期 |
2000.09.01 |
申请人 |
NATIONAL RESEARCH COUNCIL OF CANADA |
发明人 |
DUBOWSKI JAN J. |
分类号 |
H01S5/026;H01S5/20;H01S5/34;(IPC1-7):H01L21/00 |
主分类号 |
H01S5/026 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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