发明名称 Passivation layer for packaged integrated circuits
摘要 Passivating layers methods for forming the same are provided for packaged integrated circuit devices. In particular, an integrated circuit die is mounted in a plastic leaded chip carrier, and a photosensitive material is then deposited over the surfaces to be passivated. Portions of the photosensitive material are then exposed to UV light, resulting in a crosslinked siloxane network. In this way, a low-temperature photodefinable passivation layer is provided for the package, with characteristics similar to conventional oxides. Advantageously, the photosensitive material can be patterned during the UV exposure, and unexposed portions selectively removed to leave the passivation layer only over desired portions of the package.
申请公布号 US6515355(B1) 申请公布日期 2003.02.04
申请号 US19980145106 申请日期 1998.09.02
申请人 MICRON TECHNOLOGY, INC. 发明人 JIANG TONGBI;YIN ZHIPING
分类号 H01L21/312;H01L23/13;H01L23/498;(IPC1-7):H01L23/02 主分类号 H01L21/312
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