Photoresist monomers, polymers thereof and photoresist compositions containing it

摘要

The present invention provides photoresist monomers, and photoresist polymers comprising the same. In one aspect of the present invention, the photoresist monomer of the present invention is dipropargyl malonic acid cyclic isopropylidene ester of the formula:Photoresist compositions comprising the photoresist polymers of the present invention have superior 157 nm wavelength transmittance, etching resistance, heat resistance and adhesiveness. In addition, photoresist compositions of the present invention can be developed easily in 2.38 wt % aqueous TMAH solution, and therefore are suitable for lithography processes using a 157 nm wavelength-light source for fabricating a minute circuit of a high integration semiconductor device.