Removal of heat from SOI device

摘要

According to the invention, a silicon-on-insulator (SOI) device and a method of constructing the device is disclosed. The SOI device has a substrate with a BOX layer disposed on the upper surface of the substrate. The BOX has an upper surface and a cavity extending from the upper surface partially therein. An active layer is disposed on the upper surface of BOX layer and extends into the cavity.