发明名称 Semiconductor device having a ground plane and manufacturing method thereof
摘要 A semiconductor device includes at least first and second lower layer wirings provided on a surface of an insulator on a semiconductor substrate, a first interlayer film provided on the insulator to cover surfaces of the first and second lower layer wirings, first and second connection wirings which are provided on the first interlayer film and include first and second films contacting the first and second lower layer wirings respectively, and a plate electrode which is continuously provided on the second connection wiring and includes at least the first film.
申请公布号 US6515365(B2) 申请公布日期 2003.02.04
申请号 US20010957020 申请日期 2001.09.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HIGASHI KAZUYUKI;MATSUNAGA NORIAKI
分类号 H01L23/52;H01L21/3205;H01L21/822;H01L23/522;H01L23/532;H01L27/04;(IPC1-7):H01L23/52 主分类号 H01L23/52
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