Method of fabricating abrupt source/drain junctions

摘要

A method of fabricating an integrated circuit forming abrupt source/drain junctions. The process can be utilized for P-channel or N-channel metal oxide field semiconductor effect transistors (MOSFETs) on a silicon-on-insulator (SOI) substrate. The source extension is more conductive than the drain extension. The transistor has reduced short channel effects and strong drive current and yet is reliable.