| 摘要 |
PROBLEM TO BE SOLVED: To improve bonding strength, and at the same time, to shorten peeling time by adding heating time in an adhesive, and changing automatic peeling conditions, without changing the adhesive of a glass plate and a wafer. SOLUTION: On the surface of a wafer 1, a plurality of P electrodes 2 are formed by mask deposition. First, an adhesive such as FSC is applied onto a glass plate 4. Additionally, an adhesive is applied to the surface of the P electrode 2 of the wafer 1, and is subjected to bake heating by an oven for drying. Although the adhesive is applied to the surface of the P electrode 2 again after cleaning/OAP treatment, the adhesive is not allowed to dry. Then, as shown in Fig. 1 (a), the wafer 1 and a glass plate 4 are pressurized and heated in a vacuum state to establish bonding. After that, the wafer 1 is polished into specific thickness as shown in Fig. 1 (b), and an N electrode 5 is formed by deposition, as shown in Fig. 1 (c). Then, the wafer 1 and a glass substrate 4 are dipped in NMP being heated to 95 deg.C for 90 minutes and are dipped in acetone for approximately 42 hours for dissolving an adhesive 4, and the wafer 1 is peeled off from the glass plate 4, as shown in Fig. 1 (d).
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