| 摘要 |
PROBLEM TO BE SOLVED: To prevent drop in the forward threshold voltage Vf of a semiconductor laser equipped with a window region. SOLUTION: The semiconductor laser has the window region 32, formed by disordering a GaInP/AlGaInP quantum well active layer 18 near the edge of the laser by introducing zinc to the layer 18. In the semiconductor laser, an n-type AlGaAs buffer layer 14, having a band gap larger than that of the quantum well active layer 18 has and containing Al at a percentage composition of >=0.3, is provided on a semiconductor substrate 12.
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