Magnetic random access memory magnetic switching command having electrode planes/ferromagnetic layer thickness lower than first and electrode thickness allowing magnetic coupling.

摘要

The magnetic direction reversal command mechanism has two electrode planes (3,7), a first ferromagnetic layer (4), a first magnetic layer (5) and a second ferromagnetic layer (6). The second ferromagnetic layer thickness is lower than the first. The second electrode thickness is low enough to allow magnetic coupling between the second ferromagnetic layer and the command element (8) by the command mechanism.