| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor switching element that prevents power loss from being concentrated on a part of a wafer of the element, furthermore enhances the turn-on capability of the element, can be downsized and simplified. SOLUTION: An on-gate current rising rate diG/dt is controlled so that a ratio of (a main current rate of rise di/dt at turn-on)÷(on-gate current rate of rise diG/dt at turn-on) is 1.25 or below. For example, when an anode reactor in a main circuit is decreased to a half of that of a conventional switching element to rise a main current increasing rate to be 1000 A/μs, the on-gate current rate of rise is controlled to be 800/μs or over. The inductance of a loop including the element and a gate driver is reduced to 1/3 of the inductance of the conventional element and the capacitance of a capacitor of a part generating an on-gate current in the gate driver is enhanced to be a required capacitance to attain the above.
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