发明名称 |
SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To surely supply steam of a raw material to a substrate. SOLUTION: A main heater 22 for heating a wafer is provided outside an outer tube 21 and an inner tube 23 is provided inside the outer tube 21. A cap 24, which can be moved in the vertical directions is inserted into the inner tube 23, and a boat 25 is placed on the cap 24. The cap 24 is provided with a raw material sublimation section 46 and a thermal insulating section 36. A heater section 45 is removably provided in the cap 24. A heater 26 for sublimation of the heater section 45 is disposed inside a furnace, and a raw material placement plate 34 of the raw material sublimation section 46 is provided above the heater 26 for sublimation. A plurality of columns 35 are provided in the periphery of the raw material placement plate 34. The heat insulating section 36 is supported by the columns 35 and is disposed between the raw material sublimation section 46 and a substrate processing region. The thermal insulating section 36 is packed with quartz wool.
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申请公布号 |
JP2003031515(A) |
申请公布日期 |
2003.01.31 |
申请号 |
JP20010211952 |
申请日期 |
2001.07.12 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC;SONY CORP |
发明人 |
TANIYAMA TOMOSHI;TOMEZUKA KOJI;YANAGAWA SHUSAKU |
分类号 |
H01L21/225;C23C14/08;C23C14/24;C23C14/56;H01L21/02;H01L21/22;(IPC1-7):H01L21/225 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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