METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a compound semiconductor, capable of forming a good nitride base compound semiconductor layer on a GaN single-crystal substrate. SOLUTION: This method for manufacturing the compound semiconductor, provided with the nitride base compound semiconductor layer 2 on the GaN single-crystal substrate 1 comprises a gas phase etching step for etching the surface layer of the substrate 1 by heating the GaN single-crystal substrate 1 in a mixed gas atmosphere containing hydrogen chloride gas, and a semiconductor layer growing step for forming the nitride base compound semiconductor layer, by supplying the raw material of the nitride base compound semiconductor layer 2 onto the GaN single-crystal substrate 1 after the gas phase etching step.