| 摘要 |
PROBLEM TO BE SOLVED: To provide manufacturing technology which has high controllability, large margin, and high productivity, and to provide a method of obtaining a crystalline silicon film through a stabler process having high reproducibility. SOLUTION: On an amorphous silicon film, formed on a substrate having an insulating surface, a silicon nitride film is formed and used as a mask for induce a metal element promoting crystallization of the amorphous silicon film; and the amorphous silicon film is crystallized through a heat treatment and is used as a mask for removing a region where the crystalline silicon film is exposed, thereby forming an active layer.
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