Wafer treatment component comprises a base material of isotropic material coated with a ceramic film

摘要

Wafer treatment component comprises a base material (2) of a material isotropic in all plane directions and a ceramic film (5) coating the base material. The base material has a thickness that does not exceed 3 mm. The difference of the thermal dilation coefficient between the base material and the film is between 0.6.10<-6> and 1.2.10<-6> / deg C and the thermal dilation coefficient of the base material in all plane directions does not exceed 0.05.10<-6> / deg C.