| 摘要 |
PROBLEM TO BE SOLVED: To integrate a semiconductor memory while increasing the capacity. SOLUTION: A plurality of ONO films 30 are formed in matrix on the surface of a substrate 20S and a gate electrode is formed on the ONO film 30. An n-type impurity layer 50 and a p-type impurity layer 60 are formed in the surface of substrate 20S. The p-type impurity layer 60 is formed between the n-type impurity layers 50. The n-type impurity layer 50 and the p-type impurity layer 60 are formed to surround the ONO film 30 and the gate electrode in the plan view of the surface of substrate 20S.
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