| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory cell, having a pinned reference layer which does not require pinned orientation of magnetization. SOLUTION: A tunnel junction (10), having a cladded read conductor formed from a high magnetic permeability soft magnetic material for a pinned-on-the-fly soft reference layer, is disclosed. The tunnel junction (10) includes a data layer (11), a barrier layer (13) formed on the data layer, a cap layer (15) formed on the barrier layer, and a soft reference layer (17) formed on the cap layer. The soft reference layer (17) includes a read conductor (19) a cladding (21), that completely surrounds the read conductor (19) to form a cladded read conductor. The soft reference layer (17) has a non-pinned orientation of magnetization (M1). When an externally supplied read current flows through the read conductor, the read conductor (19) generates a magnetic field, that is substantially contained within the cladding (21) and is operative to dynamically pin the orientation of magnetization (M1) in a desired direction.
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