MANUFACTURING METHOD FOR SILICON WAFER AND SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To obtain proper surface roughness through suppressing of slipping, by making the temperature of heat treatment low or shortening its time in a manufacturing method for a silicon wafer and the silicon wafer. SOLUTION: The manufacturing method has a heat treatment stage for newly forming pores in the silicon wafer W by heat-treating the silicon wafer W inside an atmospheric gas G, which includes nitrogen gas having decomposable temperature which is lower than the temperature at which N2 can be resolved.