| 摘要 |
<p>A circuit element (101) that includes a ferroelectric device (102) connected to a substrate device (104). The circuit element is constructed by fabricating the substrate device (13) in a semiconductor substrate (12) and depositing a dielectric layer (17) over the semiconductor substrate (12). A via (18) is then etched in the dielectric layer (17) to provide access to the substrate device (13) and filled with copper or tungsten. A layer of a conducting metallic oxide (22) is then deposited on the conducting plug (21), and a layer (24) of ferroelectric material is deposited on the layer (22) of conducting metal oxide. The layer (22) of conducting metallic oxide is deposited at a temperature below 450°C, preferably at room temperature.</p> |
