| 摘要 |
<p>High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers (319). An accommodating buffer layer (317) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer (311) by an amorphous interface layer (316)of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating bufferlayer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Upon completion of the growth of the monocrystalline materials, devices (325,326) to be buried within one or more layers of the substrate are formed therein.</p> |
