Process for adjusting the height of the step between active regions and insulating regions during the production of integrated circuits involves implanting an electrically non-active element

摘要

Process for adjusting height of step between active and insulating regions during production of integrated circuits comprises: etching trenches (6) filled with oxide (8') in a semiconductor substrate (1) to isolate active regions; and implanting electrically non-active element into oxide (8') in partial region (II) of semiconductor wafer to change etching rate of oxide in the partial region. An Independent claim is also included for a process for the production of a dynamic random access memory (DRAM) semiconductor memory.