| 摘要 |
A non-volatile semiconductor memory device has, at a main surface of a semiconductor substrate, an uneven shape with recesses and protrusions repeated continuously and alternately and further includes a source diffusion layer region having a source region formed from an upper surface of each protrusion to the depth direction of the semiconductor substrate and a source diffusion layer interconnection formed from a bottom surface of the recess to the depth direction of the semiconductor substrate when the semiconductor substrate is viewed two-dimensionally. The depth of the bottom surface of the source region from the upper surface of the protrusion is made equal to or larger than the depth of the bottom surface of the recess from the upper surface of the protrusion. Thus, a non-volatile semiconductor memory device is provided which is suitable for miniaturization and in which resistance of the source diffusion layer region can easily be lowered.
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