OPTICAL STRUCTURE ON COMPLIANT SUBSTRATE

摘要

High quality epitaxial layers of compound semiconductor materials (108) can be grown overlying large silicon wafers by first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Optical structures such as visible light lasers and light emitting diodes can be grown on the high quality epitaxial compound semiconductor material to create highly reliable devices having reduced costs.