发明名称 ITO SINTERED BODY SPUTTERING TARGET FOR FORMING HIGH-RESISTANCE FILM AND ITS MANUFACTURING METHOD
摘要 <p>An ITO sintered body sputtering target characterized by containing 20 to 50 wt% of tin oxide and its manufacturing method. The ITO sintered body sputtering target is useful to form a high-resistance transparent conductive film, especially a transparent conductive film used for determining a position on the screen of, e.g., a resistance-film touch-panel device and having a high surface resistivity of 300 to 1000 Ω/&amp;square;.</p>
申请公布号 WO2003008658(P1) 申请公布日期 2003.01.30
申请号 JP2002003250 申请日期 2002.04.01
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