发明名称 |
Semiconductor laser structure and method of manufacturing same |
摘要 |
A semiconductor laser structure includes a substrate and an active region having at least one active laser layer. The active region is included in a ridge protruding from an exposed surface of the substrate. The ridge extends in the direction of the laser cavity and includes at least two opposed and electrically connected lateral extensions defining respective metal bonding pads distributed along the length of the laser cavity.
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申请公布号 |
US2003021321(A1) |
申请公布日期 |
2003.01.30 |
申请号 |
US20020206833 |
申请日期 |
2002.07.29 |
申请人 |
FANG RUIYU;PAOLETTI ROBERTO |
发明人 |
FANG RUIYU;PAOLETTI ROBERTO |
分类号 |
H01S5/02;H01S5/042;H01S5/062;H01S5/12;H01S5/227;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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