发明名称 Semiconductor laser structure and method of manufacturing same
摘要 A semiconductor laser structure includes a substrate and an active region having at least one active laser layer. The active region is included in a ridge protruding from an exposed surface of the substrate. The ridge extends in the direction of the laser cavity and includes at least two opposed and electrically connected lateral extensions defining respective metal bonding pads distributed along the length of the laser cavity.
申请公布号 US2003021321(A1) 申请公布日期 2003.01.30
申请号 US20020206833 申请日期 2002.07.29
申请人 FANG RUIYU;PAOLETTI ROBERTO 发明人 FANG RUIYU;PAOLETTI ROBERTO
分类号 H01S5/02;H01S5/042;H01S5/062;H01S5/12;H01S5/227;(IPC1-7):H01S5/00 主分类号 H01S5/02
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