发明名称 |
Capacitor and method of manufacturing the same |
摘要 |
There is provided the capacitor which has the lower electrode having a structure in which the first conductive layer containing a first metal, the second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and the third conductive layer that is formed on the second conductive layer and made of the third metal different from the first metal are formed sequentially; the dielectric layer formed on the lower electrode; and the upper electrode formed on the capacitor dielectric layer.
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申请公布号 |
US2003022454(A1) |
申请公布日期 |
2003.01.30 |
申请号 |
US20020115208 |
申请日期 |
2002.04.04 |
申请人 |
FUJITSU LIMITED |
发明人 |
WANG WENSHENG;FUJIKI MITSUSHI;NAKAMURA KO |
分类号 |
H01L23/52;H01L21/02;H01L21/3205;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01L21/20 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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