发明名称 |
METHOD FOR GENERATING RESET SIGNAL IN SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A method for generating reset signal in semiconductor memory device is provided, which is capable of reducing a layout area occupied by a stabilization circuit and power consumption. CONSTITUTION: A precharge command is received to precharge all banks of a semiconductor memory device(310). A reset signal is activated with the first level based on the received precharge command(320). After receiving the precharge command, a refresh command is received to refresh the semiconductor memory device(330). After receiving the refresh command, a mode setting command is received to reset the semiconductor memory device(340). The reset signal is inactivated with the second level base on the received mode setting command(350).
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申请公布号 |
KR20030009141(A) |
申请公布日期 |
2003.01.29 |
申请号 |
KR20020038893 |
申请日期 |
2002.07.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE, IL MAN;KIM, JAE HUN;LEE, JAE HYEONG |
分类号 |
G11C7/20;(IPC1-7):G11C7/00 |
主分类号 |
G11C7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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