发明名称 METHOD FOR GENERATING RESET SIGNAL IN SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A method for generating reset signal in semiconductor memory device is provided, which is capable of reducing a layout area occupied by a stabilization circuit and power consumption. CONSTITUTION: A precharge command is received to precharge all banks of a semiconductor memory device(310). A reset signal is activated with the first level based on the received precharge command(320). After receiving the precharge command, a refresh command is received to refresh the semiconductor memory device(330). After receiving the refresh command, a mode setting command is received to reset the semiconductor memory device(340). The reset signal is inactivated with the second level base on the received mode setting command(350).
申请公布号 KR20030009141(A) 申请公布日期 2003.01.29
申请号 KR20020038893 申请日期 2002.07.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BAE, IL MAN;KIM, JAE HUN;LEE, JAE HYEONG
分类号 G11C7/20;(IPC1-7):G11C7/00 主分类号 G11C7/20
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