Schottky barrier diode and manufacturing method of schottky barrier diode
摘要
<p>A Schottky barrier diode has a Schottky electrode (11) formed on an operation region of a GaAs substrate (1) and an ohmic electrode (8) surrounding the Schottky electrode (11). The ohmic electrode (8) is disposed directly on an impurity-implanted region (7) formed on the substrate (1). A nitride film (5) insulates the ohmic electrode (8) from a wiring layer connected to the Schottky electrode (11) crossing over the ohmic electrode (8). The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices. <IMAGE></p>
