| 摘要 |
Disclosed herein is a method for manufacturing a semiconductor device having a high melting point metal silicide layer, especially a cobalt silicide layer. The uniformity of the metal silicide layer improves characteristics of the semiconductor device such as a heat resistance. In the present invention, the uniformity of the eventual metal silicide layer is improved by adjusting the degree of ion-implantation and thermal treatment of a precursor of the metal silicide layer.
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