Manufacturing method of semiconductor device

摘要

The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are sequentially formed while a wiring mainly consisting of copper film is coated. Its constitution includes the steps of: forming the barrier insulating film 35a on a substrate 21 subject to deposition, in which an electric power having a first frequency (f1) is applied to a first film forming gas containing at least silicon-containing gas and oxygen-containing gas to transform said first film forming gas into plasma and to cause reaction; and forming the main insulating film 35b having low relative dielectric constant on the barrier insulating film 35a, in which an electric power having a second frequency (f2) higher than the first frequency (f1) is applied to a second film forming gas containing at least the silicon-containing gas and the oxygen-containing gas to transform the second film forming gas into plasma and to cause reaction. <IMAGE>