发明名称 |
Increased gate to body coupling and application to dram and dynamic circuits |
摘要 |
An FET and DRAM using a plurality of such FETs wherein each transistor has a body region of a first conductivity type including a relatively high VT region and relatively low VT region, the high VT region disposed contiguous with the low VT region. A pair of source/drain regions of opposite conductivity type are disposed on a pair of opposing sides of each of the low VT region. The transistor includes a gate oxide over the body region and a gate electrode over the gate oxide and spaced from the body region. The body region is p-doped or n-doped with the high VT region more heavily doped than the remainder of the body. In a further embodiment, the FET includes a body region of a first conductivity type which includes a relatively low VT region and a first pair of relatively high VT regions on a first pair of opposing sides of the body. A pair of source/drain regions of opposite conductivity type are disposed on a second pair of opposing sides of each of the low VT region. A gate oxide is disposed over the body region and a gate electrode is disposed over the gate oxide and spaced from the body region.
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申请公布号 |
US6512272(B1) |
申请公布日期 |
2003.01.28 |
申请号 |
US20000685038 |
申请日期 |
2000.10.10 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HOUSTON THEODORE W. |
分类号 |
H01L21/336;H01L21/8242;H01L29/10;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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