发明名称 |
Method and structure for improving hot carrier immunity for devices with very shallow junctions |
摘要 |
An integrated circuit CMOS structure and method for forming the structure provides gate sidewall spacers which are independently optimized for the n-channel and p-channel devices to improve hot-carrier lifetime while maintaining high drive currents. This is accomplished by providing polysilicon spacers for the n-channel devices and silicon nitride spacers for the p-channel devices.
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申请公布号 |
US6512273(B1) |
申请公布日期 |
2003.01.28 |
申请号 |
US20000493440 |
申请日期 |
2000.01.28 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KRIVOKAPIC ZORAN;MILIC OGNJEN;CHERIAN SUNNY |
分类号 |
H01L21/8238;(IPC1-7):H01L29/94;H01L31/113;H01L31/119 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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