| 摘要 |
FIELD: low-barrier gallium arsenide diodes. SUBSTANCE: manufacturing process includes photolithography of barrier area pattern, covering of this area with multicomponent metal film using vacuum evaporation method, and heat treatment of metal film followed by cooling down; eutectic Au-Ge alloy is used as metal film which is applied to cold substrate followed by explosion lithography of barrier area metallization. Mass of Au-Ge preform amounts to one fourth of that of preform used for manufacturing ohmic contact of same diode. Heat treatment of structure obtained is conducted at 390-420 C for 10-60 s; heating time is 0.7-1.5 min, cooling time is 20-60 s. EFFECT: improved high-frequency characteristics of diode. 6 cl
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