SELF-ALIGNED CONTACT AND FORMATION METHOD FOR SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide the self-aligning contact pad formation method of a semiconductor element which minimizes the loss of a nitride film. SOLUTION: The self-aligned contact pad formation method is provided with a stage of forming a gate 120 where the nitride film 130 as a gate mask and the nitride film 140 as a spacer are formed on a semiconductor substrate 100, a stage of forming an HDP oxide film 150 as an interlayer insulation film provided with an opening part on the semiconductor substrate 100, a stage of forming a polysilicon film 160 as a conductive film on the HDP oxide film 150 provided with the opening part, a stage of etching back the polysilicon film 160 until the HDP oxide film 150 is exposed, a stage of performing primary CMP until the nitride film 130 is exposed by using oxide slurry and a stage of performing secondary CMP to the polysilicon film 160 by using poly slurry and forming contact pads 161 and 162.