发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To enhance a production efficiency of a semiconductor laser element including a constitution of a partly formed diffraction grating 13 or the like. SOLUTION: A method for manufacturing the semiconductor element comprises a step of batch forming a semiconductor laser element having the diffraction grating 13, partly provided at a laser beam emitting end face side or a reflecting end face side on a semiconductor substrate by using a semiconductor processing technique. The method further comprises a first exposure step of electron beam exposing or ion beam exposing for drawing only a diffraction grating region E1 provided with the grating 13 corresponding to a pattern of the grating 13, and a second exposure step of optically exposing or X-ray exposing a region except the region E1 with the region E1 masked.
申请公布号 JP2003023210(A) 申请公布日期 2003.01.24
申请号 JP20010206996 申请日期 2001.07.06
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 TSUKIJI NAOKI;IRINO SATOSHI
分类号 H01L21/027;G03F7/20;H01S5/02;H01S5/12;H01S5/125;H01S5/227;(IPC1-7):H01S5/125 主分类号 H01L21/027
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