发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To enhance a production efficiency of a semiconductor laser element including a constitution of a partly formed diffraction grating 13 or the like. SOLUTION: A method for manufacturing the semiconductor element comprises a step of batch forming a semiconductor laser element having the diffraction grating 13, partly provided at a laser beam emitting end face side or a reflecting end face side on a semiconductor substrate by using a semiconductor processing technique. The method further comprises a first exposure step of electron beam exposing or ion beam exposing for drawing only a diffraction grating region E1 provided with the grating 13 corresponding to a pattern of the grating 13, and a second exposure step of optically exposing or X-ray exposing a region except the region E1 with the region E1 masked.
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申请公布号 |
JP2003023210(A) |
申请公布日期 |
2003.01.24 |
申请号 |
JP20010206996 |
申请日期 |
2001.07.06 |
申请人 |
FURUKAWA ELECTRIC CO LTD:THE |
发明人 |
TSUKIJI NAOKI;IRINO SATOSHI |
分类号 |
H01L21/027;G03F7/20;H01S5/02;H01S5/12;H01S5/125;H01S5/227;(IPC1-7):H01S5/125 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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