发明名称 RESIST MATERIAL AND PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a resist material having a high contrast in alkali dissolution rate before and after exposure, having high sensitivity and high resolution and exhibiting superior etching resistance by adding a high molecular compound obtained by copolymerizing a norbornadiene carboxylate substitution product having an acid labile group and an indene substitution product as a base resin to a resist material. SOLUTION: The resist material contains a high molecular compound having repeating units of formula (1) (where R<1> and R<2> are each H, hydroxy, alkyl, substitutable alkoxy or halogen; R<3> is an acid labile group; (m) is 0 or a positive integer of 1-4; and (p) and (q) are each a positive number) and having a weight average molecular weight of 1,000-500,000.
申请公布号 JP2003021904(A) 申请公布日期 2003.01.24
申请号 JP20010204603 申请日期 2001.07.05
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;TAKEDA TAKANOBU;WATANABE OSAMU;HASEGAWA KOJI
分类号 G03F7/039;C08F232/08;C08F234/00;G03F7/004;H01L21/027 主分类号 G03F7/039
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